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In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.GreenMOS series products cover the whole series of 500V~900V, can provide up to 100A static current specifications, high operating frequency up to 2MHz, can meet the needs of various power systems. Based on its characteristics of high efficiency and low temperature rise, it is especially suitable for PD charger, LED power supply, communication, server power supply, electric vehicle charging pile and other systems.

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

Oriental Semiconductor has launched IGBT products such as high speed series, low Vcesat series and RC series, covering 600V~1700V, which can be widely used in white goods, new energy inverter, automobile driver, etc.

The Hybrid FET devices adopt a new device structure and dynamic current regulation technology, which can achieve high-speed switching and high current processing capabilities, which has a wider safe operating area and higher product stability.